Single FETs, MOSFETs

Results: 3
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedInfineon Technologies
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V55 V120 V
Current - Continuous Drain (Id) @ 25°C
760mA (Ta)2.1A (Ta)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
7.8mOhm @ 30A, 10V160mOhm @ 2.1A, 4.5V600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.3 nC @ 4.5 V5.1 nC @ 10 V49 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
75 pF @ 25 V300 pF @ 25 V3224 pF @ 60 V
Power Dissipation (Max)
540mW (Ta)1.25W (Ta)2.9W
Supplier Device Package
Micro3™/SOT-23PowerDI5060-8SOT-23-3
Package / Case
3-SMD, SOT-23-3 Variant8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML5103TRPBF
MOSFET P-CH 30V 760MA SOT23
Infineon Technologies
56,165
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.77862
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
760mA (Ta)
4.5V, 10V
600mOhm @ 600mA, 10V
1V @ 250µA
5.1 nC @ 10 V
±20V
75 pF @ 25 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
AO3422
MOSFET N-CH 55V 2.1A SOT23-3
Alpha & Omega Semiconductor Inc.
1,017,739
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.86945
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
2.1A (Ta)
2.5V, 4.5V
160mOhm @ 2.1A, 4.5V
2V @ 250µA
3.3 nC @ 4.5 V
±12V
300 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
DMPH4015SPSQ-13
DMT12H007LPS-13
MOSFET N-CH 120V 90A PWRDI5060-8
Diodes Incorporated
6,377
In Stock
132,500
Factory
1 : ¥13.14000
Cut Tape (CT)
2,500 : ¥5.42852
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
90A (Tc)
4.5V, 10V
7.8mOhm @ 30A, 10V
2.5V @ 250µA
49 nC @ 10 V
±20V
3224 pF @ 60 V
-
2.9W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerDI5060-8
8-PowerTDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.