Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedInfineon Technologiesonsemi
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V50 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)130mA (Ta)170mA (Ta)390mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 390mA, 4.5V6Ohm @ 170mA, 10V7.5Ohm @ 50mA, 5V8Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id
1.2V @ 1.5µA2V @ 1mA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.62 nC @ 4.5 V1.3 nC @ 5 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V56 pF @ 15 V60 pF @ 25 V73 pF @ 25 V
Power Dissipation (Max)
200mW (Ta)225mW (Ta)250mW (Ta)370mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
PG-SOT323SOT-23-3SOT-23-3 (TO-236)SOT-323
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002-7-F
MOSFET N-CH 60V 115MA SOT23-3
Diodes Incorporated
377,621
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26991
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-323
BSS123W-7-F
MOSFET N-CH 100V 170MA SOT323
Diodes Incorporated
442,776
In Stock
963,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.40266
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
4.5V, 10V
6Ohm @ 170mA, 10V
2V @ 1mA
-
±20V
60 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SOT 23-3
BSS84
MOSFET P-CH 50V 130MA SOT23-3
onsemi
108,795
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.06410
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
4.5V, 10V
8Ohm @ 150mA, 10V
2.5V @ 250µA
1.3 nC @ 5 V
±20V
73 pF @ 25 V
-
225mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-323
BSS223PWH6327XTSA1
MOSFET P-CH 20V 390MA SOT323-3
Infineon Technologies
76,272
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.48134
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
390mA (Ta)
2.5V, 4.5V
1.2Ohm @ 390mA, 4.5V
1.2V @ 1.5µA
0.62 nC @ 4.5 V
±12V
56 pF @ 15 V
-
250mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT323
SC-70, SOT-323
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of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.