Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Rohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
30 V750 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V18V
Rds On (Max) @ Id, Vgs
16.9mOhm @ 58A, 18V44mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA4.8V @ 30.8mA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 4.5 V170 nC @ 18 V
Vgs (Max)
±12V+21V, -4V
Input Capacitance (Ciss) (Max) @ Vds
635 pF @ 15 V4580 pF @ 500 V
Power Dissipation (Max)
490mW (Ta)312W
Operating Temperature
-55°C ~ 150°C (TJ)175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-236ABTO-247-4L
Package / Case
TO-236-3, SC-59, SOT-23-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV40UN2R
MOSFET N-CH 30V 3.7A TO236AB
Nexperia USA Inc.
403,963
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.72353
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.7A (Ta)
1.8V, 4.5V
44mOhm @ 3.7A, 4.5V
900mV @ 250µA
12 nC @ 4.5 V
±12V
635 pF @ 15 V
-
490mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SCT4026DRHRC15
SCT4013DRC15
750V, 13M, 4-PIN THD, TRENCH-STR
Rohm Semiconductor
0
In Stock
Check Lead Time
1 : ¥331.92000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
105A (Tc)
18V
16.9mOhm @ 58A, 18V
4.8V @ 30.8mA
170 nC @ 18 V
+21V, -4V
4580 pF @ 500 V
-
312W
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.