Single FETs, MOSFETs

Results: 4
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon Technologiesonsemi
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V25 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)220mA (Ta)4.3A (Ta)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.7V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
22mOhm @ 12A, 10V50mOhm @ 4.3A, 4.5V4Ohm @ 400mA, 4.5V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
950mV @ 250µA1.06V @ 250µA2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V15 nC @ 5 V41 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V50 pF @ 25 V830 pF @ 10 V1870 pF @ 20 V
Power Dissipation (Max)
225mW (Ta)350mW (Ta)1.3W (Ta)2.5W (Ta), 62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
Micro3™/SOT-23SOT-23-3SOT-23-3 (TO-236)TO-252 (DPAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
524,386
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37018
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
304,672
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
Infineon Technologies
111,031
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.88633
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
4.3A (Ta)
1.8V, 4.5V
50mOhm @ 4.3A, 4.5V
950mV @ 250µA
15 nC @ 5 V
±8V
830 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
37,401
In Stock
1 : ¥4.84000
Cut Tape (CT)
2,500 : ¥1.63891
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
40A (Tc)
4.5V, 10V
22mOhm @ 12A, 10V
3V @ 250µA
41 nC @ 10 V
±20V
1870 pF @ 20 V
-
2.5W (Ta), 62.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.