Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

C3M0065100K SICFET N-CH 1000V 35A TO247-4L Wolfspeed, Inc.	601 In Stock	1 : ¥175.12000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1000 V	35A (Tc)	15V	78mOhm @ 20A, 15V	3.5V @ 5mA	35 nC @ 15 V	+19V, -8V	660 pF @ 600 V	-	113.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
TPH2R408QM,L1Q MOSFET N-CH 80V 120A 8SOP Toshiba Semiconductor and Storage	33,141 In Stock	1 : ¥12.97000 Cut Tape (CT) 5,000 : ¥5.61262 Tape & Reel (TR)	U-MOSX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	120A (Tc)	6V, 10V	2.43mOhm @ 50A, 10V	3.5V @ 1mA	87 nC @ 10 V	±20V	8300 pF @ 40 V	-	3W (Ta), 210W (Tc)	175°C	-	-	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
SQSA12CENW-T1_GE3 AUTOMOTIVE N-CHANNEL 100 V (D-S) Vishay Siliconix	13,064 In Stock	1 : ¥7.39000 Cut Tape (CT) 3,000 : ¥2.80866 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	18A (Tc)	4.5V, 10V	22mOhm @ 7A, 10V	2.5V @ 250µA	47 nC @ 10 V	±20V	2900 pF @ 25 V	-	62.5W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® 1212-8W	PowerPAK® 1212-8W
IXFN170N65X2 MOSFET N-CH 650V 170A SOT227B Littelfuse Inc.	1 In Stock	1 : ¥463.44000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	170A (Tc)	10V	13mOhm @ 85A, 10V	5V @ 8mA	434 nC @ 10 V	±30V	27000 pF @ 25 V	-	1170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.