Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
8.4A (Ta), 32A (Tc)11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs
12.3mOhm @ 10.7A, 10V27mOhm @ 8.4A, 10V
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 5 V65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2380 pF @ 20 V3215 pF @ 30 V
Power Dissipation (Max)
3.1W (Ta), 69W (Tc)69W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252AA
FDD4685
MOSFET P-CH 40V 8.4A/32A DPAK
onsemi
9,643
In Stock
1 : ¥11.74000
Cut Tape (CT)
2,500 : ¥4.86129
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
8.4A (Ta), 32A (Tc)
4.5V, 10V
27mOhm @ 8.4A, 10V
3V @ 250µA
27 nC @ 5 V
±20V
2380 pF @ 20 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FDD5353
MOSFET N-CH 60V 11.5A/50A DPAK
onsemi
2,053
In Stock
1 : ¥12.81000
Cut Tape (CT)
2,500 : ¥5.31289
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
11.5A (Ta), 50A (Tc)
4.5V, 10V
12.3mOhm @ 10.7A, 10V
3V @ 250µA
65 nC @ 10 V
±20V
3215 pF @ 30 V
-
3.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.