Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedToshiba Semiconductor and Storage
Series
-U-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 23A, 10V6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2.5V @ 300µA
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V1990 pF @ 30 V
Power Dissipation (Max)
300mW (Ta)66W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)175°C
Supplier Device Package
DPAKSOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS123-7-F
MOSFET N-CH 100V 170MA SOT23-3
Diodes Incorporated
156,901
In Stock
13,041,000
Factory
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.35562
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
10V
6Ohm @ 170mA, 10V
2V @ 1mA
-
±20V
60 pF @ 25 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
0
In Stock
Check Lead Time
1 : ¥7.31000
Cut Tape (CT)
2,500 : ¥3.02012
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
46A (Tc)
4.5V, 10V
6.7mOhm @ 23A, 10V
2.5V @ 300µA
26 nC @ 10 V
±20V
1990 pF @ 30 V
-
66W (Tc)
175°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.