Single FETs, MOSFETs

Results: 3
Manufacturer
EPCInfineon Technologies
Series
eGaN®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V30 V40 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 40A (Tc)22A (Ta). 40A (Tc)90A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V
Rds On (Max) @ Id, Vgs
1.1mOhm @ 50A, 5V1.9mOhm @ 20A, 10V3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.5V @ 28mA
Gate Charge (Qg) (Max) @ Vgs
18.3 nC @ 10 V33 nC @ 5 V44 nC @ 10 V
Vgs (Max)
+6V, -4V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 12 V2800 pF @ 15 V4523 pF @ 20 V
Power Dissipation (Max)
2.1W (Ta), 30W (Tc)2.1W (Ta), 69W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
DiePG-TSDSON-8-FL
Package / Case
8-PowerTDFNDie
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EPC2066
EPC2066
TRANSISTOR GAN 40V .001OHM
EPC
6,865
In Stock
1 : ¥49.34000
Cut Tape (CT)
1,000 : ¥27.98417
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
40 V
90A (Ta)
5V
1.1mOhm @ 50A, 5V
2.5V @ 28mA
33 nC @ 5 V
+6V, -4V
4523 pF @ 20 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
TSDSON-8
BSZ031NE2LS5ATMA1
MOSFET N-CH 25V 19A/40A TSDSON
Infineon Technologies
6,785
In Stock
1 : ¥8.70000
Cut Tape (CT)
5,000 : ¥3.42775
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
19A (Ta), 40A (Tc)
4.5V, 10V
3.1mOhm @ 20A, 10V
2V @ 250µA
18.3 nC @ 10 V
±16V
1230 pF @ 12 V
-
2.1W (Ta), 30W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
TSDSON-8
BSZ019N03LSATMA1
MOSFET N-CH 30V 22A . 40A TSDSON
Infineon Technologies
88,375
In Stock
1 : ¥9.28000
Cut Tape (CT)
5,000 : ¥5.52295
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
22A (Ta). 40A (Tc)
4.5V, 10V
1.9mOhm @ 20A, 10V
2V @ 250µA
44 nC @ 10 V
±20V
2800 pF @ 15 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.