Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesTexas InstrumentsToshiba Semiconductor and Storage
Series
-NexFET™OptiMOS™U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)2.5A (Ta)50A (Tc)100A (Ta)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 8V4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 150A, 10V2.2mOhm @ 28A, 10V11mOhm @ 50A, 10V90mOhm @ 2.5A, 10V185mOhm @ 1A, 8V
Vgs(th) (Max) @ Id
1.2V @ 1mA2.3V @ 250µA3V @ 250µA3.8V @ 250µA4V @ 23µA
Gate Charge (Qg) (Max) @ Vgs
1.1 nC @ 4.2 V8.2 nC @ 10 V33 nC @ 10 V53 nC @ 10 V211 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
130 pF @ 10 V371.3 pF @ 15 V2700 pF @ 30 V4230 pF @ 30 V16000 pF @ 50 V
Power Dissipation (Max)
760mW (Ta)1W (Ta)2.5W (Ta), 50W (Tc)3.1W (Ta), 195W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-VSON-CLIP (5x6)PG-HSOF-8-1PG-TDSON-8-5SOT-23-3SOT-23F
Package / Case
8-PowerSFN8-PowerTDFNSOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC110N06NS3GATMA1
MOSFET N-CH 60V 50A TDSON-8
Infineon Technologies
8,140
In Stock
1 : ¥8.21000
Cut Tape (CT)
5,000 : ¥3.22090
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
10V
11mOhm @ 50A, 10V
4V @ 23µA
33 nC @ 10 V
±20V
2700 pF @ 30 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
CSD18540Q5B
CSD18540Q5B
MOSFET N-CH 60V 100A 8VSON
Texas Instruments
5,511
In Stock
1 : ¥19.38000
Cut Tape (CT)
2,500 : ¥8.74935
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
4.5V, 10V
2.2mOhm @ 28A, 10V
2.3V @ 250µA
53 nC @ 10 V
±20V
4230 pF @ 30 V
-
3.1W (Ta), 195W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
x-xSOF-8-1
IPT015N10N5ATMA1
MOSFET N-CH 100V 300A 8HSOF
Infineon Technologies
22,351
In Stock
1 : ¥49.92000
Cut Tape (CT)
2,000 : ¥26.53364
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
300A (Tc)
6V, 10V
1.5mOhm @ 150A, 10V
3.8V @ 250µA
211 nC @ 10 V
±20V
16000 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
74,630
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.63495
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
2A (Ta)
1.8V, 8V
185mOhm @ 1A, 8V
1.2V @ 1mA
1.1 nC @ 4.2 V
±12V
130 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SOT-23-3
DMG2307L-7
MOSFET P-CH 30V 2.5A SOT-23
Diodes Incorporated
102,276
In Stock
546,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.68119
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
30 V
2.5A (Ta)
4.5V, 10V
90mOhm @ 2.5A, 10V
3V @ 250µA
8.2 nC @ 10 V
±20V
371.3 pF @ 15 V
-
760mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.