Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedGoford SemiconductorInfineon Technologies
Series
-OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V50 V100 V
Current - Continuous Drain (Id) @ 25°C
130mA (Ta)190mA (Ta)3A (Ta)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V5V
Rds On (Max) @ Id, Vgs
10mOhm @ 15A, 10V72mOhm @ 3.5A, 4.5V6Ohm @ 190mA, 10V10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
1.25V @ 250µA1.8V @ 13µA2V @ 1mA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.9 nC @ 10 V7.3 nC @ 4.5 V50 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
20.9 pF @ 25 V45 pF @ 25 V443 pF @ 16 V2622 pF @ 15 V
Power Dissipation (Max)
200mW (Ta)500mW (Ta)1.4W (Ta)78W (Tc)
Supplier Device Package
PG-SOT23SOT-23-3SOT-323TO-252
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
Showing
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS84W-7-F
MOSFET P-CH 50V 130MA SOT323
Diodes Incorporated
353,846
In Stock
7,761,000
Factory
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.57291
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
5V
10Ohm @ 100mA, 5V
2V @ 1mA
-
±20V
45 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SOT-23-3
BSS123NH6433XTMA1
MOSFET N-CH 100V 190MA SOT23-3
Infineon Technologies
225,911
In Stock
1 : ¥3.12000
Cut Tape (CT)
10,000 : ¥0.45904
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
190mA (Ta)
4.5V, 10V
6Ohm @ 190mA, 10V
1.8V @ 13µA
0.9 nC @ 10 V
±20V
20.9 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP2123LQ-7
MOSFET P-CH 20V 3A SOT23
Diodes Incorporated
78,563
In Stock
627,000
Factory
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.05767
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
72mOhm @ 3.5A, 4.5V
1.25V @ 250µA
7.3 nC @ 4.5 V
±12V
443 pF @ 16 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
20N06
G40P03K
P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<
Goford Semiconductor
1,962
In Stock
1 : ¥4.85000
Cut Tape (CT)
2,500 : ¥1.77286
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
40A (Tc)
4.5V, 10V
10mOhm @ 15A, 10V
2.5V @ 250µA
50 nC @ 10 V
±20V
2622 pF @ 15 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.