Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
-FRFET®, SUPERFET®HEXFET®
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
100 V600 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)36A (Tc)45A (Tc)
Rds On (Max) @ Id, Vgs
26.5mOhm @ 22A, 10V55mOhm @ 22.5A, 10V77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA4.8V @ 5.2mA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V72 nC @ 10 V85.2 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 25 V1770 pF @ 25 V4603 pF @ 400 V
Power Dissipation (Max)
92W (Tc)150W (Tc)278W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
TO-220ABTO-247-3TO-262
Package / Case
TO-220-3TO-247-3TO-262-3 Long Leads, I2PAK, TO-262AA
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB
IRF540PBF
MOSFET N-CH 100V 28A TO220AB
Vishay Siliconix
31,821
In Stock
1 : ¥11.90000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
28A (Tc)
10V
77mOhm @ 17A, 10V
4V @ 250µA
72 nC @ 10 V
±20V
1700 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-262-3
IRF540ZLPBF
MOSFET N-CH 100V 36A TO262
Infineon Technologies
114
In Stock
1 : ¥17.73000
Tube
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
100 V
36A (Tc)
10V
26.5mOhm @ 22A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1770 pF @ 25 V
-
92W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-247-3
NVHL055N60S5F
SUPERFET5 FRFET, 55MOHM, TO-247-
onsemi
0
In Stock
450
Factory
Check Lead Time
1 : ¥63.79000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
45A (Tc)
10V
55mOhm @ 22.5A, 10V
4.8V @ 5.2mA
85.2 nC @ 10 V
±30V
4603 pF @ 400 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
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of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.