Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiSTMicroelectronics
Series
-STripFET™ V
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Tj)3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V5V
Rds On (Max) @ Id, Vgs
30mOhm @ 2A, 4.5V120mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 4.5 V15 nC @ 5 V
Vgs (Max)
±8V±15V
Input Capacitance (Ciss) (Max) @ Vds
367 pF @ 16 V440 pF @ 25 V
Power Dissipation (Max)
350mW (Tc)1.3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
SOT-223 (TO-261)SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-223 (TO-261)
NTF3055L108T1G
MOSFET N-CH 60V 3A SOT223
onsemi
18,280
In Stock
1 : ¥7.06000
Cut Tape (CT)
1,000 : ¥3.00090
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
3A (Ta)
5V
120mOhm @ 1.5A, 5V
2V @ 250µA
15 nC @ 5 V
±15V
440 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-223 (TO-261)
TO-261-4, TO-261AA
TS432AILT
STR2N2VH5
MOSFET N-CH 20V 2.3A SOT23
STMicroelectronics
77,609
In Stock
1 : ¥6.24000
Cut Tape (CT)
3,000 : ¥3.33306
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.3A (Tj)
2.5V, 4.5V
30mOhm @ 2A, 4.5V
700mV @ 250µA (Min)
4.6 nC @ 4.5 V
±8V
367 pF @ 16 V
-
350mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.