Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
140mA (Ta)1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V2.7V, 4.5V
Rds On (Max) @ Id, Vgs
160mOhm @ 1.5A, 4.5V5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.75 nC @ 4.5 V5 nC @ 4.5 V
Vgs (Max)
±6V±8V
Power Dissipation (Max)
250mW (Ta)500mW (Ta)
Supplier Device Package
SC-75ASOT-23-3
Package / Case
SC-75, SOT-416TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
NDS331N
MOSFET N-CH 20V 1.3A SUPERSOT3
onsemi
153,828
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.20594
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
2.7V, 4.5V
160mOhm @ 1.5A, 4.5V
1V @ 250µA
5 nC @ 4.5 V
±8V
162 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Pkg 5868
SI1032R-T1-GE3
MOSFET N-CH 20V 140MA SC75A
Vishay Siliconix
16,098
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.10173
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
140mA (Ta)
1.5V, 4.5V
5Ohm @ 200mA, 4.5V
1.2V @ 250µA
0.75 nC @ 4.5 V
±6V
-
-
250mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-75A
SC-75, SOT-416
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.