Single FETs, MOSFETs

Results: 3
Manufacturer
EPCMicro Commercial Coonsemi
Series
-eGaN®PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V150 V200 V
Current - Continuous Drain (Id) @ 25°C
170mA (Tj)6.7A (Ta), 20A (Tc)48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V6V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 16A, 10V25mOhm @ 6.7A, 10V6Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA2.5V @ 4mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2 nC @ 10 V10.6 nC @ 5 V36 nC @ 10 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V1401 pF @ 100 V2330 pF @ 75 V
Power Dissipation (Max)
350mW2.5W (Ta), 96W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
7-QFN (3x5)8-PQFN (5x6)SOT-23
Package / Case
7-PowerWQFN8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-PQFN
FDMS86250
MOSFET N-CH 150V 6.7A/20A 8PQFN
onsemi
14,054
In Stock
1 : ¥20.93000
Cut Tape (CT)
3,000 : ¥9.45084
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
6.7A (Ta), 20A (Tc)
6V, 10V
25mOhm @ 6.7A, 10V
4V @ 250µA
36 nC @ 10 V
±20V
2330 pF @ 75 V
-
2.5W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
EPC2307ENGRT
EPC2307ENGRT
TRANS GAN 200V .010OHM 7QFN
EPC
24,525
In Stock
1 : ¥49.34000
Cut Tape (CT)
3,000 : ¥26.22222
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
10mOhm @ 16A, 10V
2.5V @ 4mA
10.6 nC @ 5 V
+6V, -4V
1401 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
7-QFN (3x5)
7-PowerWQFN
SOT 23
BSS123K-TP
MOSFET N-CH 100V 170MA SOT23
Micro Commercial Co
15,748
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.32983
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Tj)
4.5V, 10V
6Ohm @ 250mA, 10V
2.5V @ 250µA
2 nC @ 10 V
±20V
60 pF @ 25 V
-
350mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.