Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.Toshiba Semiconductor and StorageVishay Siliconix
Series
-TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)10A (Ta)12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
25.8mOhm @ 4A, 10V26mOhm @ 9A, 10V1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA1.5V @ 250µA2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V8.5 nC @ 4.5 V21.5 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V700 pF @ 20 V1110 pF @ 15 V
Power Dissipation (Max)
260mW (Ta), 830mW (Tc)1.5W (Ta)3.5W (Ta), 19W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)175°C
Supplier Device Package
6-TSOP-FPowerPAK® SC-70-6SOT-323
Package / Case
6-SMD, Flat LeadsPowerPAK® SC-70-6SC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138PW,115
MOSFET N-CH 60V 320MA SOT323
Nexperia USA Inc.
914,651
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37872
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
10V
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
260mW (Ta), 830mW (Tc)
-55°C ~ 150°C (TA)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
PowerPak SC-70-6 Single
SIA440DJ-T1-GE3
MOSFET N-CH 40V 12A PPAK SC70-6
Vishay Siliconix
35,496
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.27197
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
12A (Tc)
2.5V, 10V
26mOhm @ 9A, 10V
1.4V @ 250µA
21.5 nC @ 10 V
±12V
700 pF @ 20 V
-
3.5W (Ta), 19W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
6-TSOP-F
SSM6K819R,LF
N-CH MOSFET, 100 V, 10 A, 0.0258
Toshiba Semiconductor and Storage
12,143
In Stock
1 : ¥8.46000
Cut Tape (CT)
3,000 : ¥2.08592
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
10A (Ta)
4.5V, 10V
25.8mOhm @ 4A, 10V
2.5V @ 100µA
8.5 nC @ 4.5 V
±20V
1110 pF @ 15 V
-
1.5W (Ta)
175°C
Automotive
AEC-Q101
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.