Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedTexas Instruments
Series
-NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
8 V20 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)5A (Ta)
Rds On (Max) @ Id, Vgs
5.7mOhm @ 2A, 4.5V120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id
1.05V @ 250µA1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V14.6 nC @ 4.5 V
Vgs (Max)
-6V±8V
Input Capacitance (Ciss) (Max) @ Vds
476 pF @ 10 V2275 pF @ 4 V
Power Dissipation (Max)
1.5W (Ta)1.7W (Ta)
Supplier Device Package
9-DSBGASOT-23-3
Package / Case
9-UFBGA, DSBGATO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG2301L-7
MOSFET P-CH 20V 3A SOT23
Diodes Incorporated
107,522
In Stock
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.43742
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
120mOhm @ 2.8A, 4.5V
1.2V @ 250µA
5.5 nC @ 4.5 V
±8V
476 pF @ 10 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
YZF-9-BGA Pkg
CSD22206WT
MOSFET P-CH 8V 5A 9DSBGA
Texas Instruments
14,901
In Stock
1 : ¥7.72000
Cut Tape (CT)
250 : ¥4.87400
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
8 V
5A (Ta)
2.5V, 4.5V
5.7mOhm @ 2A, 4.5V
1.05V @ 250µA
14.6 nC @ 4.5 V
-6V
2275 pF @ 4 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
9-DSBGA
9-UFBGA, DSBGA
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.