Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSS138W-7-F MOSFET N-CH 50V 200MA SOT323 Diodes Incorporated	736,642 In Stock	1 : ¥2.38000 Cut Tape (CT) 3,000 : ¥0.40362 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	200mA (Ta)	10V	3.5Ohm @ 220mA, 10V	1.5V @ 250µA	-	±20V	50 pF @ 10 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
SIA427DJ-T1-GE3 MOSFET P-CH 8V 12A PPAK SC70-6 Vishay Siliconix	17,152 In Stock	1 : ¥4.52000 Cut Tape (CT) 3,000 : ¥1.52883 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	8 V	12A (Tc)	1.2V, 4.5V	16mOhm @ 8.2A, 4.5V	800mV @ 250µA	50 nC @ 5 V	±5V	2300 pF @ 4 V	-	3.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
SIRA80DP-T1-RE3 MOSFET N-CH 30V 100A PPAK SO-8 Vishay Siliconix	15,244 In Stock	1 : ¥12.56000 Cut Tape (CT) 3,000 : ¥5.65749 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	100A (Tc)	4.5V, 10V	0.62mOhm @ 20A, 10V	2.2V @ 250µA	188 nC @ 10 V	+20V, -16V	9530 pF @ 15 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.