Single FETs, MOSFETs

Results: 2
Series
HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V200 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)72A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @ 20A, 10V22mOhm @ 44A, 10V
Vgs(th) (Max) @ Id
4V @ 23µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 30 V5380 pF @ 50 V
Power Dissipation (Max)
2.1W (Ta), 50W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
D2PAKPG-TSDSON-8
Package / Case
8-PowerVDFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TSDSON-8-34
BSZ110N06NS3GATMA1
MOSFET N-CH 60V 20A 8TSDSON
Infineon Technologies
9,350
In Stock
1 : ¥7.06000
Cut Tape (CT)
5,000 : ¥2.78219
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
20A (Tc)
10V
11mOhm @ 20A, 10V
4V @ 23µA
33 nC @ 10 V
±20V
2700 pF @ 30 V
-
2.1W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerVDFN
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS4127TRLPBF
MOSFET N-CH 200V 72A D2PAK
Infineon Technologies
18,191
In Stock
1 : ¥28.98000
Cut Tape (CT)
800 : ¥17.49786
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
72A (Tc)
10V
22mOhm @ 44A, 10V
5V @ 250µA
150 nC @ 10 V
±20V
5380 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.