Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

G3R45MT17D SIC MOSFET N-CH 61A TO247-3 GeneSiC Semiconductor	971 In Stock	1 : ¥268.70000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	61A (Tc)	15V	58mOhm @ 40A, 15V	2.7V @ 8mA	182 nC @ 15 V	±15V	4523 pF @ 1000 V	-	438W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXFN360N10T MOSFET N-CH 100V 360A SOT-227B Littelfuse Inc.	0 In Stock Check Lead Time	1 : ¥227.32000 Tube	HiPerFET™, Trench	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	360A (Tc)	10V	2.6mOhm @ 180A, 10V	4.5V @ 250µA	505 nC @ 10 V	±20V	36000 pF @ 25 V	-	830W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.