Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMN10H170SK3-13 MOSFET N-CH 100V 12A TO252-3 Diodes Incorporated	137,090 In Stock 237,500 Factory	1 : ¥3.45000 Cut Tape (CT) 2,500 : ¥1.61631 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	12A (Tc)	4.5V, 10V	140mOhm @ 5A, 10V	3V @ 250µA	9.7 nC @ 10 V	±20V	1167 pF @ 25 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRF5210STRLPBF MOSFET P-CH 100V 38A D2PAK Infineon Technologies	2,091 In Stock	1 : ¥24.05000 Cut Tape (CT) 800 : ¥14.51094 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	38A (Tc)	10V	60mOhm @ 38A, 10V	4V @ 250µA	230 nC @ 10 V	±20V	2780 pF @ 25 V	-	3.1W (Ta), 170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQM120N10-3M8_GE3 MOSFET N-CH 100V 120A TO263 Vishay Siliconix	1,662 In Stock	1 : ¥30.29000 Cut Tape (CT) 800 : ¥18.30058 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	3.8mOhm @ 20A, 10V	3.5V @ 250µA	190 nC @ 10 V	±20V	7230 pF @ 25 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSZ065N06LS5ATMA1 MOSFET N-CH 60V 40A TSDSON Infineon Technologies	0 In Stock Check Lead Time	1 : ¥11.08000 Cut Tape (CT) 5,000 : ¥4.38078 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	40A (Tc)	4.5V, 10V	6.5mOhm @ 20A, 10V	2.3V @ 20µA	13 nC @ 4.5 V	±20V	1800 pF @ 30 V	-	46W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.