Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedonsemiVishay Siliconix
Series
-PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)1.8A (Ta)1.9A (Ta)6.2A (Ta)12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
22mOhm @ 6A, 5V24mOhm @ 6.2A, 4.5V120mOhm @ 2.5A, 10V120mOhm @ 4A, 4.5V350mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)1V @ 250µA1.5V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3 nC @ 4.5 V3.9 nC @ 10 V4.8 nC @ 10 V12 nC @ 4.5 V30 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V190 pF @ 25 V303 pF @ 15 V895 pF @ 10 V1250 pF @ 25 V
Power Dissipation (Max)
625mW (Ta)1.6W (Ta)6.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-SOICSOT-23-3SuperSOT™-6
Package / Case
8-SOIC (0.154", 3.90mm Width)SOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
ZXM61P03FTA
MOSFET P-CH 30V 1.1A SOT23-3
Diodes Incorporated
86,549
In Stock
561,000
Factory
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥1.12146
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
1.1A (Ta)
4.5V, 10V
350mOhm @ 600mA, 10V
1V @ 250µA
4.8 nC @ 10 V
±20V
140 pF @ 25 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
ZXMN3A01FTA
MOSFET N-CH 30V 1.8A SOT23-3
Diodes Incorporated
89,633
In Stock
57,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥1.24606
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.8A (Ta)
4.5V, 10V
120mOhm @ 2.5A, 10V
1V @ 250µA
3.9 nC @ 10 V
±20V
190 pF @ 25 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
ZXMN2A01FTA
MOSFET N-CH 20V 1.9A SOT23-3
Diodes Incorporated
20,907
In Stock
1,095,000
Factory
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.05767
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.9A (Ta)
2.5V, 4.5V
120mOhm @ 4A, 4.5V
700mV @ 250µA (Min)
3 nC @ 4.5 V
±12V
303 pF @ 15 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SG6858TZ
FDC637BNZ
MOSFET N-CH 20V 6.2A SUPERSOT6
onsemi
31,484
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.18637
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
6.2A (Ta)
2.5V, 4.5V
24mOhm @ 6.2A, 4.5V
1.5V @ 250µA
12 nC @ 4.5 V
±12V
895 pF @ 10 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SuperSOT™-6
SOT-23-6 Thin, TSOT-23-6
8-SOIC
SQ4850EY-T1_GE3
MOSFET N-CH 60V 12A 8SO
Vishay Siliconix
21,869
In Stock
1 : ¥10.84000
Cut Tape (CT)
2,500 : ¥4.48209
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
12A (Tc)
4.5V, 10V
22mOhm @ 6A, 5V
2.5V @ 250µA
30 nC @ 10 V
±20V
1250 pF @ 25 V
-
6.8W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.