Single FETs, MOSFETs

Results: 9
Manufacturer
Infineon TechnologiesToshiba Semiconductor and StorageVishay Siliconix
Series
HEXFET®HEXFET®, StrongIRFET™ThunderFET®TrenchFET®U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
4.8A (Tc)6A (Ta)6A (Tc)110A (Tc)120A (Tc)195A (Tc)240A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 100A, 10V1.4mOhm @ 200A, 10V1.6mOhm @ 30A, 10V1.8mOhm @ 100A, 10V2.4mOhm @ 165A, 10V5mOhm @ 20A, 10V28mOhm @ 5.5A, 10V28mOhm @ 5A, 10V45mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.5V @ 100µA2.5V @ 250µA3.9V @ 150µA3.9V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.4 nC @ 4.5 V13 nC @ 10 V35 nC @ 10 V140 nC @ 4.5 V180 nC @ 4.5 V225 nC @ 10 V230 nC @ 10 V280 nC @ 10 V460 nC @ 10 V
Vgs (Max)
±12V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
424 pF @ 15 V436 pF @ 15 V7330 pF @ 25 V10990 pF @ 40 V11155 pF @ 30 V11210 pF @ 50 V11300 pF @ 25 V14240 pF @ 25 V
Power Dissipation (Max)
1W (Ta)1W (Ta), 1.7W (Tc)1.3W (Ta), 2.5W (Tc)15W (Ta), 375W (Tc)230W (Tc)375W (Tc)380W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)-
Supplier Device Package
D2PAKD2PAK (7-Lead)SOT-23SOT-23-3 (TO-236)SOT-23FTO-263 (D2PAK)TO-263AB
Package / Case
SOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS7437TRLPBF
MOSFET N CH 40V 195A D2PAK
Infineon Technologies
6,603
In Stock
1 : ¥15.19000
Cut Tape (CT)
800 : ¥8.50424
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
6V, 10V
1.8mOhm @ 100A, 10V
3.9V @ 150µA
225 nC @ 10 V
±20V
7330 pF @ 25 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLS3036TRLPBF
MOSFET N-CH 60V 195A D2PAK
Infineon Technologies
1,992
In Stock
1 : ¥30.05000
Cut Tape (CT)
800 : ¥18.12475
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
195A (Tc)
4.5V, 10V
2.4mOhm @ 165A, 10V
2.5V @ 250µA
140 nC @ 4.5 V
±16V
11210 pF @ 50 V
-
380W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
SUM110P04-05-E3
MOSFET P-CH 40V 110A TO263
Vishay Siliconix
46,483
In Stock
1 : ¥37.60000
Cut Tape (CT)
800 : ¥22.68585
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
110A (Tc)
10V
5mOhm @ 20A, 10V
4V @ 250µA
280 nC @ 10 V
±20V
11300 pF @ 25 V
-
15W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SOT-23-3
SI2371EDS-T1-GE3
MOSFET P-CH 30V 4.8A SOT-23
Vishay Siliconix
10,948
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.74209
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.8A (Tc)
2.5V, 10V
45mOhm @ 3.7A, 10V
1.5V @ 250µA
35 nC @ 10 V
±12V
-
-
1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
54,707
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.79512
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
4.5V, 10V
28mOhm @ 5A, 10V
2.5V @ 100µA
3.4 nC @ 4.5 V
±20V
436 pF @ 15 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SOT-23-3
SI2338DS-T1-GE3
MOSFET N-CH 30V 6A SOT23
Vishay Siliconix
5,544
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.40645
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6A (Tc)
4.5V, 10V
28mOhm @ 5.5A, 10V
2.5V @ 250µA
13 nC @ 10 V
±20V
424 pF @ 15 V
-
1.3W (Ta), 2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUM40010EL-GE3
MOSFET N-CH 40V 120A D2PAK
Vishay Siliconix
4,799
In Stock
1 : ¥22.82000
Cut Tape (CT)
800 : ¥13.79064
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
120A (Tc)
4.5V, 10V
1.6mOhm @ 30A, 10V
2.5V @ 250µA
230 nC @ 10 V
±20V
11155 pF @ 30 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS7430TRLPBF
MOSFET N-CH 40V 195A D2PAK
Infineon Technologies
1,293
In Stock
1 : ¥24.87000
Cut Tape (CT)
800 : ¥14.99651
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
6V, 10V
1.2mOhm @ 100A, 10V
3.9V @ 250µA
460 nC @ 10 V
±20V
14240 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK SOT427
IRLS3034TRL7PP
MOSFET N-CH 40V 240A D2PAK
Infineon Technologies
6,981
In Stock
1 : ¥29.14000
Cut Tape (CT)
800 : ¥13.62984
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
240A (Tc)
4.5V, 10V
1.4mOhm @ 200A, 10V
2.5V @ 250µA
180 nC @ 4.5 V
±20V
10990 pF @ 40 V
-
380W (Tc)
-
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Showing
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.