Single FETs, MOSFETs

Results: 2
Series
SuperMESH3™SuperMESH™
Drain to Source Voltage (Vdss)
900 V1000 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Tc)15A (Tc)
Rds On (Max) @ Id, Vgs
550mOhm @ 7.5A, 10V3.7Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100µA4.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1154 pF @ 25 V6100 pF @ 25 V
Power Dissipation (Max)
125W (Tc)350W (Tc)
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3 HiP
STW5NK100Z
MOSFET N-CH 1000V 3.5A TO247-3
STMicroelectronics
681
In Stock
1 : ¥35.06000
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N-Channel
MOSFET (Metal Oxide)
1000 V
3.5A (Tc)
10V
3.7Ohm @ 1.75A, 10V
4.5V @ 100µA
59 nC @ 10 V
±30V
1154 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-247-3 HiP
STW15NK90Z
MOSFET N-CH 900V 15A TO247-3
STMicroelectronics
599
In Stock
1 : ¥71.43000
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N-Channel
MOSFET (Metal Oxide)
900 V
15A (Tc)
10V
550mOhm @ 7.5A, 10V
4.5V @ 150µA
256 nC @ 10 V
±30V
6100 pF @ 25 V
-
350W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.