Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

TSM210N02CX RFG MOSFET N-CHANNEL 20V 6.7A SOT23 Taiwan Semiconductor Corporation	125,309 In Stock	1 : ¥4.10000 Cut Tape (CT) 3,000 : ¥1.10561 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	6.7A (Tc)	1.8V, 4.5V	25mOhm @ 4A, 4.5V	800mV @ 250µA	4 nC @ 4.5 V	±10V	600 pF @ 10 V	-	1.56W (Tc)	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
NX7002BKMBYL MOSFET N-CH 60V 350MA DFN1006B-3 Nexperia USA Inc.	36,788 In Stock	1 : ¥2.55000 Cut Tape (CT) 10,000 : ¥0.33072 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	350mA (Ta)	5V, 10V	2.8Ohm @ 200mA, 10V	2.1V @ 250µA	1 nC @ 10 V	±20V	23.6 pF @ 10 V	-	350mW (Ta), 3.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006B-3	3-XFDFN
BSS138 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	199,839 In Stock	1 : ¥1.31000 Cut Tape (CT) 3,000 : ¥0.22873 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	220mA (Ta)	4.5V, 10V	3Ohm @ 500mA, 10V	1.6V @ 250µA	-	±20V	27 pF @ 25 V	-	350mW (Ta)	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.