Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

PMN30XPX MOSFET P-CH 20V 5.2A 6TSOP Nexperia USA Inc.	114,755 In Stock	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥1.00732 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	5.2A (Ta)	1.5V, 4.5V	34mOhm @ 5.2A, 4.5V	900mV @ 250µA	23 nC @ 4.5 V	±12V	1575 pF @ 10 V	-	550mW (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
R6020ENJTL MOSFET N-CH 600V 20A LPTS Rohm Semiconductor	5,841 In Stock	1 : ¥22.00000 Cut Tape (CT) 1,000 : ¥11.38265 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	196mOhm @ 9.5A, 10V	4V @ 1mA	60 nC @ 10 V	±20V	1400 pF @ 25 V	-	40W (Tc)	150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SSM3K72KFS,LF MOSFET N-CH 60V 300MA SSM Toshiba Semiconductor and Storage	110,334 In Stock	1 : ¥1.48000 Cut Tape (CT) 3,000 : ¥0.29446 Tape & Reel (TR)	U-MOSVII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	300mA (Ta)	4.5V, 10V	1.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.6 nC @ 4.5 V	±20V	40 pF @ 10 V	-	150mW (Ta)	150°C	Surface Mount	SSM	SC-75, SOT-416

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.