Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
-OptiMOS™TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)4.3A (Tc)50A (Tc)93.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V7.5V, 10V10V
Rds On (Max) @ Id, Vgs
4.8mOhm @ 20A, 10V15mOhm @ 50A, 10V170mOhm @ 750mA, 10V540mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id
2.4V @ 60µA4V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V14.3 nC @ 10 V64 nC @ 10 V81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V492 pF @ 25 V3750 pF @ 50 V4180 pF @ 25 V
Power Dissipation (Max)
1W (Ta)2.5W (Ta), 25W (Tc)100W (Tc)104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
DPAKPG-TO252-3-11PowerPAK® SO-8SOT-223 (TO-261)
Package / Case
PowerPAK® SO-8TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SIR668ADP-T1-RE3
MOSFET N-CH 100V 93.6A PPAK SO-8
Vishay Siliconix
7,887
In Stock
1 : ¥18.14000
Cut Tape (CT)
3,000 : ¥8.18846
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
93.6A (Tc)
7.5V, 10V
4.8mOhm @ 20A, 10V
4V @ 250µA
81 nC @ 10 V
±20V
3750 pF @ 50 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
D-PAK (TO-252AA)
IRFR110TRPBF
MOSFET N-CH 100V 4.3A DPAK
Vishay Siliconix
2,175
In Stock
1 : ¥7.88000
Cut Tape (CT)
2,000 : ¥3.26085
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.3A (Tc)
10V
540mOhm @ 2.6A, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD50N10S3L16ATMA1
MOSFET N-CH 100V 50A TO252-3
Infineon Technologies
1,681
In Stock
1 : ¥16.26000
Cut Tape (CT)
2,500 : ¥7.31504
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
50A (Tc)
4.5V, 10V
15mOhm @ 50A, 10V
2.4V @ 60µA
64 nC @ 10 V
±20V
4180 pF @ 25 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-223 (TO-261)
NVF2955T1G
MOSFET P-CH 60V 2.6A SOT223
onsemi
3,796
In Stock
1 : ¥9.36000
Cut Tape (CT)
1,000 : ¥4.10113
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
60 V
2.6A (Ta)
10V
170mOhm @ 750mA, 10V
4V @ 1mA
14.3 nC @ 10 V
±20V
492 pF @ 25 V
-
1W (Ta)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-223 (TO-261)
TO-261-4, TO-261AA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.