Single FETs, MOSFETs

Results: 2
Series
U-MOSVIU-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
6A (Ta)60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
11.2mOhm @ 30A, 10V28mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 100µA3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3.4 nC @ 4.5 V156 nC @ 10 V
Vgs (Max)
+10V, -20V±20V
Input Capacitance (Ciss) (Max) @ Vds
436 pF @ 15 V7760 pF @ 10 V
Power Dissipation (Max)
1W (Ta)100W (Tc)
Operating Temperature
150°C (TJ)175°C (TJ)
Supplier Device Package
DPAK+SOT-23F
Package / Case
SOT-23-3 Flat LeadsTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
54,707
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.79512
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
4.5V, 10V
28mOhm @ 5A, 10V
2.5V @ 100µA
3.4 nC @ 4.5 V
±20V
436 pF @ 15 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
3,500
In Stock
1 : ¥23.64000
Cut Tape (CT)
2,000 : ¥7.33725
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
60A (Ta)
6V, 10V
11.2mOhm @ 30A, 10V
3V @ 1mA
156 nC @ 10 V
+10V, -20V
7760 pF @ 10 V
-
100W (Tc)
175°C (TJ)
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.