Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.onsemiTexas Instruments
Series
NexFET™PowerTrench®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
25 V30 V100 V
Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)30A (Ta), 120A (Tc)100A (Ta)
Rds On (Max) @ Id, Vgs
1.6mOhm @ 40A, 10V1.8mOhm @ 30A, 10V365mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id
1.9V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V29 nC @ 4.5 V61 nC @ 10 V
Vgs (Max)
+16V, -12V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
549 pF @ 50 V4100 pF @ 12.5 V5235 pF @ 15 V
Power Dissipation (Max)
710mW (Ta), 8.3W (Tc)2.5W (Ta), 83W (Tc)3.1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-PQFN (5x6)8-VSON-CLIP (5x6)TO-236AB
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV240SPR
MOSFET P-CH 100V 1.2A TO236AB
Nexperia USA Inc.
4,506
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥1.13334
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1.2A (Ta)
-
365mOhm @ 1.2A, 10V
4V @ 250µA
15 nC @ 10 V
±25V
549 pF @ 50 V
-
710mW (Ta), 8.3W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
8-PQFN
FDMS8018
MOSFET N-CH 30V 30A/120A 8PQFN
onsemi
15,259
In Stock
1 : ¥13.96000
Cut Tape (CT)
3,000 : ¥6.30042
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
30A (Ta), 120A (Tc)
4.5V, 10V
1.8mOhm @ 30A, 10V
3V @ 250µA
61 nC @ 10 V
±20V
5235 pF @ 15 V
-
2.5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
8-Power TDFN
CSD16401Q5T
MOSFET N-CH 25V 100A 8VSON
Texas Instruments
532
In Stock
1 : ¥23.97000
Cut Tape (CT)
250 : ¥15.39304
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
100A (Ta)
4.5V, 10V
1.6mOhm @ 40A, 10V
1.9V @ 250µA
29 nC @ 4.5 V
+16V, -12V
4100 pF @ 12.5 V
-
3.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.