Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Vishay Siliconix
Series
TrenchFET® Gen IVTrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
190mA (Ta)25.5A (Ta), 92.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
3.65mOhm @ 15A, 10V4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.43 nC @ 4.5 V56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 10 V2540 pF @ 30 V
Power Dissipation (Max)
265mW (Ta)5W (Ta), 65.7W (Tc)
Supplier Device Package
PowerPAK® 1212-8STO-236AB
Package / Case
PowerPAK® 1212-8STO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8S
SISS22LDN-T1-GE3
MOSFET N-CH 60V 25.5A/92.5A PPAK
Vishay Siliconix
14,350
In Stock
1 : ¥9.52000
Cut Tape (CT)
3,000 : ¥3.93882
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
25.5A (Ta), 92.5A (Tc)
4.5V, 10V
3.65mOhm @ 15A, 10V
2.5V @ 250µA
56 nC @ 10 V
±20V
2540 pF @ 30 V
-
5W (Ta), 65.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
TO-236AB
NX7002AKVL
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
24,882
In Stock
1 : ¥1.23000
Cut Tape (CT)
10,000 : ¥0.16735
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
190mA (Ta)
5V, 10V
4.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.43 nC @ 4.5 V
±20V
20 pF @ 10 V
-
265mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.