Single FETs, MOSFETs

Results: 4
Manufacturer
EPCInfineon TechnologiesNexperia USA Inc.Toshiba Semiconductor and Storage
Series
-eGaN®OptiMOS™U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)500mA (Ta)13A (Tc)38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V8V, 10V10V
Rds On (Max) @ Id, Vgs
15.4mOhm @ 19A, 10V90mOhm @ 10A, 10V800mOhm @ 400mA, 10V3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
2.5V @ 20µA2.5V @ 250µA4V @ 1mA4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
0.044 nC @ 5 V1.1 nC @ 10 V7 nC @ 10 V22 nC @ 10 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
8.4 pF @ 50 V39 pF @ 30 V510 pF @ 75 V2200 pF @ 75 V
Power Dissipation (Max)
300mW (Ta), 4.7W (Tc)1.6W (Ta), 78W (Tc)38W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C
Supplier Device Package
8-SOP Advance (5x5)DFN0603-3 (SOT8013)DiePG-TSDSON-8
Package / Case
8-PowerTDFN8-PowerVDFN0201 (0603 Metric)Die
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSZ900N15NS3GATMA1
MOSFET N-CH 150V 13A 8TSDSON
Infineon Technologies
11,831
In Stock
1 : ¥11.00000
Cut Tape (CT)
5,000 : ¥4.33120
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
13A (Tc)
8V, 10V
90mOhm @ 10A, 10V
4V @ 20µA
7 nC @ 10 V
±20V
510 pF @ 75 V
-
38W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
eGaN Series
EPC2038
GANFET N-CH 100V 500MA DIE
EPC
170,006
In Stock
1 : ¥11.25000
Cut Tape (CT)
2,500 : ¥4.64058
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
500mA (Ta)
5V
3.3Ohm @ 50mA, 5V
2.5V @ 20µA
0.044 nC @ 5 V
+6V, -4V
8.4 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
12,408
In Stock
1 : ¥15.11000
Cut Tape (CT)
5,000 : ¥6.57037
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
38A (Tc)
10V
15.4mOhm @ 19A, 10V
4V @ 1mA
22 nC @ 10 V
±20V
2200 pF @ 75 V
-
1.6W (Ta), 78W (Tc)
150°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
27,513
In Stock
1 : ¥3.28000
Cut Tape (CT)
15,000 : ¥0.63601
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
800mOhm @ 400mA, 10V
2.5V @ 250µA
1.1 nC @ 10 V
±20V
39 pF @ 30 V
-
300mW (Ta), 4.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN0603-3 (SOT8013)
0201 (0603 Metric)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.