Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiToshiba Semiconductor and Storage
Series
PowerTrench®U-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
20 V40 V
Current - Continuous Drain (Id) @ 25°C
600mA (Ta)1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V1.8V, 8V
Rds On (Max) @ Id, Vgs
195mOhm @ 1A, 8V300mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.1 nC @ 4.2 V1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 10 V130 pF @ 10 V
Power Dissipation (Max)
500mW (Ta)625mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
ES6SC-89-3
Package / Case
SC-89, SOT-490SOT-563, SOT-666
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
1,321
In Stock
1 : ¥3.94000
Cut Tape (CT)
4,000 : ¥0.84355
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
1.8A (Ta)
1.8V, 8V
195mOhm @ 1A, 8V
1.2V @ 1mA
1.1 nC @ 4.2 V
±12V
130 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
ES6
SOT-563, SOT-666
PowerTrench Series SC-89-3
FDY302NZ
MOSFET N-CH 20V 600MA SC89-3
onsemi
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
600mA (Ta)
1.8V, 4.5V
300mOhm @ 600mA, 4.5V
1.5V @ 250µA
1.1 nC @ 4.5 V
±12V
60 pF @ 10 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-3
SC-89, SOT-490
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.