Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.55mOhm @ 25A, 10V42mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 10 V65 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
281 pF @ 10 V4044 pF @ 15 V
Power Dissipation (Max)
500mW (Ta)179W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
LFPAK56, Power-SO8SOT-323
Package / Case
SC-100, SOT-669SC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
DMN2058UW-7
MOSFET N-CH 20V 3.5A SOT323
Diodes Incorporated
65,823
In Stock
717,000
Factory
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.54644
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
3.5A (Ta)
1.8V, 10V
42mOhm @ 3A, 10V
1.2V @ 250µA
7.7 nC @ 10 V
±12V
281 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
LFPAK56/POWER-SO8/SOT669
PSMN1R5-30YLC,115
MOSFET N-CH 30V 100A LFPAK56
Nexperia USA Inc.
4,904
In Stock
1 : ¥12.56000
Cut Tape (CT)
1,500 : ¥5.50177
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100A (Tc)
4.5V, 10V
1.55mOhm @ 25A, 10V
1.95V @ 1mA
65 nC @ 10 V
±20V
4044 pF @ 15 V
-
179W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.