Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
50A (Tc)70A (Tc)
Rds On (Max) @ Id, Vgs
6mOhm @ 30A, 10V6.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
2V @ 150µA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 15 V7720 pF @ 15 V
Power Dissipation (Max)
56W (Tc)100W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IPD060N03LGATMA1
MOSFET N-CH 30V 50A TO252-3
Infineon Technologies
1,265
In Stock
1 : ¥7.39000
Cut Tape (CT)
2,500 : ¥3.05598
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
6mOhm @ 30A, 10V
2.2V @ 250µA
23 nC @ 10 V
±20V
2400 pF @ 15 V
-
56W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD068P03L3GATMA1
MOSFET P-CH 30V 70A TO252-3
Infineon Technologies
6,368
In Stock
1 : ¥9.36000
Cut Tape (CT)
2,500 : ¥3.87092
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
70A (Tc)
4.5V, 10V
6.8mOhm @ 70A, 10V
2V @ 150µA
91 nC @ 10 V
±20V
7720 pF @ 15 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.