Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
HEXFET®, StrongIRFET™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V40 V100 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)28A (Tc)85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 50A, 10V22mOhm@ 13.5A, 4.5V41mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA3V @ 250µA3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 4.5 V98 nC @ 10 V160 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
3174 pF @ 25 V3600 pF @ 6 V4600 pF @ 50 V
Power Dissipation (Max)
5.2W (Ta), 83W (Tc)6W (Tc)78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-PQFN (5x6)8-SOICPowerPAK® SO-8
Package / Case
8-SOIC (0.154", 3.90mm Width)8-TQFN Exposed PadPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SI7489DP-T1-GE3
MOSFET P-CH 100V 28A PPAK SO-8
Vishay Siliconix
11,442
In Stock
1 : ¥20.93000
Cut Tape (CT)
3,000 : ¥9.42879
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
28A (Tc)
4.5V, 10V
41mOhm @ 7.8A, 10V
3V @ 250µA
160 nC @ 10 V
±20V
4600 pF @ 50 V
-
5.2W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8-SOIC
SQ4005EY-T1_GE3
MOSFET P-CHANNEL 12V 15A 8SOIC
Vishay Siliconix
5,556
In Stock
1 : ¥7.96000
Cut Tape (CT)
2,500 : ¥3.28676
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
15A (Tc)
2.5V, 4.5V
22mOhm@ 13.5A, 4.5V
1V @ 250µA
38 nC @ 4.5 V
±8V
3600 pF @ 6 V
-
6W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
8-PowerPQFN
IRFH7446TRPBF
MOSFET N-CH 40V 85A 8PQFN
Infineon Technologies
24,000
In Stock
1 : ¥8.37000
Cut Tape (CT)
4,000 : ¥4.44956
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
85A (Tc)
6V, 10V
3.3mOhm @ 50A, 10V
3.9V @ 100µA
98 nC @ 10 V
±20V
3174 pF @ 25 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (5x6)
8-TQFN Exposed Pad
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.