Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SSM3J332R,LF MOSFET P-CH 30V 6A SOT23F Toshiba Semiconductor and Storage	94,973 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.63492 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	6A (Ta)	1.8V, 10V	42mOhm @ 5A, 10V	1.2V @ 1mA	8.2 nC @ 4.5 V	±12V	560 pF @ 15 V	-	1W (Ta)	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J356R,LF MOSFET P-CH 60V 2A SOT-23F Toshiba Semiconductor and Storage	245,114 In Stock	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥0.73440 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	2A (Ta)	4V, 10V	300mOhm @ 1A, 10V	2V @ 1mA	8.3 nC @ 10 V	+10V, -20V	330 pF @ 10 V	-	1W (Ta)	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM3J355R,LF MOSFET P-CH 20V 6A SOT23F Toshiba Semiconductor and Storage	28,735 In Stock	1 : ¥3.45000 Cut Tape (CT) 3,000 : ¥0.74663 Tape & Reel (TR)	U-MOSVII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	6A (Ta)	1.8V, 4.5V	30.1mOhm @ 4A, 4.5V	1V @ 1mA	16.6 nC @ 4.5 V	±10V	1030 pF @ 10 V	-	1W (Ta)	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.