Single FETs, MOSFETs

Results: 2
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®U-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V200 V
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)70A (Ta)
Rds On (Max) @ Id, Vgs
4.1mOhm @ 35A, 10V80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V75 nC @ 10 V
Power Dissipation (Max)
960mW (Ta), 170W (Tc)1.9W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)175°C
Supplier Device Package
8-SOP Advance (5x5)PowerPAK® SO-8
Package / Case
8-PowerVDFNPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SI7450DP-T1-E3
MOSFET N-CH 200V 3.2A PPAK SO-8
Vishay Siliconix
5,951
In Stock
1 : ¥22.91000
Cut Tape (CT)
3,000 : ¥10.31359
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
3.2A (Ta)
6V, 10V
80mOhm @ 4A, 10V
4.5V @ 250µA
42 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
34,250
In Stock
1 : ¥23.97000
Cut Tape (CT)
5,000 : ¥7.49145
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
70A (Ta)
6V, 10V
4.1mOhm @ 35A, 10V
3.5V @ 1mA
75 nC @ 10 V
±20V
4970 pF @ 10 V
-
960mW (Ta), 170W (Tc)
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.