Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

PSMN075-100MSEX MOSFET N-CH 100V 18A LFPAK33 Nexperia USA Inc.	39,992 In Stock	1 : ¥6.24000 Cut Tape (CT) 1,500 : ¥2.64963 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	18A (Tj)	10V	71mOhm @ 5A, 10V	4V @ 1mA	16.4 nC @ 10 V	±20V	773 pF @ 50 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
PSMN040-100MSEX MOSFET N-CH 100V 30A LFPAK33 Nexperia USA Inc.	13,511 In Stock	1 : ¥6.98000 Cut Tape (CT) 1,500 : ¥3.07545 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	30A (Tj)	10V	36.6mOhm @ 10A, 10V	4V @ 1mA	30 nC @ 10 V	±20V	1470 pF @ 50 V	-	91W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
BSC160N10NS3GATMA1 MOSFET N-CH 100V 8.8A/42A TDSON Infineon Technologies	22,425 In Stock	1 : ¥12.89000 Cut Tape (CT) 5,000 : ¥5.07391 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	8.8A (Ta), 42A (Tc)	6V, 10V	16mOhm @ 33A, 10V	3.5V @ 33µA	25 nC @ 10 V	±20V	1700 pF @ 50 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.