Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002-TP MOSFET N-CH 60V 115MA SOT23 Micro Commercial Co	116,165 In Stock	1 : ¥1.40000 Cut Tape (CT) 3,000 : ¥0.24725 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	115mA (Ta)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 250µA	-	±20V	50 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IPD60R180P7SAUMA1 MOSFET N-CH 600V 18A TO252-3 Infineon Technologies	32,621 In Stock	1 : ¥13.38000 Cut Tape (CT) 2,500 : ¥5.52228 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	180mOhm @ 5.6A, 10V	4V @ 280µA	25 nC @ 10 V	±20V	1081 pF @ 400 V	-	72W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN2300UFB4-7B MOSFET N-CH 20V 1.3A 3DFN Diodes Incorporated	409,954 In Stock	1 : ¥2.46000 Cut Tape (CT) 10,000 : ¥0.40433 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.3A (Ta)	1.5V, 4.5V	175mOhm @ 300mA, 4.5V	950mV @ 250µA	1.6 nC @ 4.5 V	±8V	64.3 pF @ 25 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN1006-3	3-XFDFN
DMP3028LFDE-13 MOSFET P-CH 30V 6.8A 6UDFN Diodes Incorporated	440,092 In Stock 60,000 Factory	1 : ¥2.55000 Cut Tape (CT) 10,000 : ¥1.03854 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	6.8A (Ta)	4.5V, 10V	32mOhm @ 7A, 10V	2.4V @ 250µA	22 nC @ 10 V	±20V	1241 pF @ 15 V	-	660mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-PowerUDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.