Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V60 V
Current - Continuous Drain (Id) @ 25°C
9.6A (Ta)10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V10V
Rds On (Max) @ Id, Vgs
11mOhm @ 12A, 10V16mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 6 V57 nC @ 10 V
Vgs (Max)
±8V±20V
Power Dissipation (Max)
1.9W (Ta)2.4W (Ta)
Supplier Device Package
6-MicroFET (2x2)PowerPAK® SO-8
Package / Case
6-WDFN Exposed PadPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
6-WDFN Exposed Pad
FDMA905P
MOSFET P-CH 12V 10A 6MICROFET
onsemi
7,315
In Stock
36,000
Factory
1 : ¥10.75000
Cut Tape (CT)
3,000 : ¥4.45817
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
10A (Ta)
1.8V, 4.5V
16mOhm @ 10A, 4.5V
1V @ 250µA
29 nC @ 6 V
±8V
3405 pF @ 6 V
-
2.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-MicroFET (2x2)
6-WDFN Exposed Pad
PowerPAK SO-8
SI7370DP-T1-GE3
MOSFET N-CH 60V 9.6A PPAK SO-8
Vishay Siliconix
3,479
In Stock
1 : ¥16.99000
Cut Tape (CT)
3,000 : ¥10.15927
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
9.6A (Ta)
10V
11mOhm @ 12A, 10V
4V @ 250µA
57 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.