Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedNexperia USA Inc.onsemiTexas Instruments
Series
-NexFET™TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
220mA (Ta)300mA (Tc)3A (Ta)76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
8.9mOhm @ 10A, 4.5V75mOhm @ 3.5A, 4.5V3Ohm @ 500mA, 10V5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.15V @ 250µA1.25V @ 250µA1.6V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 10 V7.3 nC @ 4.5 V9.7 nC @ 4.5 V
Vgs (Max)
±12V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
27 pF @ 25 V50 pF @ 10 V443 pF @ 16 V1790 pF @ 10 V
Power Dissipation (Max)
350mW (Ta)830mW (Ta)1.4W (Ta)2.8W (Ta), 69W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-VSONP (3x3.3)SOT-23-3TO-236AB
Package / Case
8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002,215
MOSFET N-CH 60V 300MA TO236AB
Nexperia USA Inc.
586,058
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37855
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Tc)
10V
5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±30V
50 pF @ 10 V
-
830mW (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS138
MOSFET N-CH 50V 220MA SOT23-3
onsemi
111,076
In Stock
1 : ¥2.87000
Cut Tape (CT)
3,000 : ¥0.48928
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
2.4 nC @ 10 V
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
CSD25402Q3A
MOSFET P-CH 20V 76A 8VSON
Texas Instruments
50,686
In Stock
1 : ¥7.22000
Cut Tape (CT)
2,500 : ¥2.98840
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
76A (Tc)
1.8V, 4.5V
8.9mOhm @ 10A, 4.5V
1.15V @ 250µA
9.7 nC @ 4.5 V
±12V
1790 pF @ 10 V
-
2.8W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (3x3.3)
8-PowerVDFN
SOT-23-3
DMP2130L-7
MOSFET P-CH 20V 3A SOT23-3
Diodes Incorporated
16,671
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.05767
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
75mOhm @ 3.5A, 4.5V
1.25V @ 250µA
7.3 nC @ 4.5 V
±12V
443 pF @ 16 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.