Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V80 V
Current - Continuous Drain (Id) @ 25°C
5.7A (Ta)28A (Tc)
Rds On (Max) @ Id, Vgs
25mOhm @ 10.2A, 10V30mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 5 V160 nC @ 10 V
Power Dissipation (Max)
1.5W (Ta)5.2W (Ta), 83.3W (Tc)
Supplier Device Package
8-SOICPowerPAK® SO-8
Package / Case
8-SOIC (0.154", 3.90mm Width)PowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
SI4431BDY-T1-E3
MOSFET P-CH 30V 5.7A 8SO
Vishay Siliconix
30,642
In Stock
1 : ¥7.96000
Cut Tape (CT)
2,500 : ¥3.27896
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5.7A (Ta)
4.5V, 10V
30mOhm @ 7.5A, 10V
3V @ 250µA
20 nC @ 5 V
±20V
-
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
PowerPAK SO-8
SI7469DP-T1-GE3
MOSFET P-CH 80V 28A PPAK SO-8
Vishay Siliconix
22,026
In Stock
1 : ¥21.02000
Cut Tape (CT)
3,000 : ¥9.48427
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
28A (Tc)
4.5V, 10V
25mOhm @ 10.2A, 10V
3V @ 250µA
160 nC @ 10 V
±20V
4700 pF @ 40 V
-
5.2W (Ta), 83.3W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.