Single FETs, MOSFETs

Results: 8
Manufacturer
Infineon TechnologiesNexperia USA Inc.onsemiTexas InstrumentsVishay Siliconix
Series
-NexFET™OptiMOS™PowerTrench®TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)320mA (Ta)1.4A (Tc)16A (Ta), 128A (Tc)44A (Tc)100A (Ta)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
4mOhm @ 50A, 10V4.85mOhm @ 16A, 10V4.9mOhm @ 17A, 10V6.4mOhm @ 16A, 10V15.1mOhm @ 10A, 10V132mOhm @ 1.4A, 10V1.6Ohm @ 300mA, 10V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.1V @ 250µA3.2V @ 250µA3.3V @ 250µA3.4V @ 250µA3.8V @ 95µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V4.1 nC @ 10 V22 nC @ 10 V48 nC @ 10 V62 nC @ 10 V72 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V50 pF @ 25 V105 pF @ 15 V1680 pF @ 50 V3870 pF @ 50 V4065 pF @ 50 V4810 pF @ 50 V5300 pF @ 50 V
Power Dissipation (Max)
260mW (Ta), 830mW (Tc)350mW (Ta)400mW (Ta), 500mW (Tc)2.5W (Ta), 139W (Tc)3.1W (Ta), 195W (Tc)3.2W (Ta), 63W (Tc)3.3W (Ta), 125W (Tc)3.3W (Ta), 187W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-PQFN (5x6)8-VSON-CLIP (5x6)8-VSONP (5x6)PG-TDSON-8-7SC-70-3SOT-323
Package / Case
8-PowerTDFNSC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138PW,115
MOSFET N-CH 60V 320MA SOT323
Nexperia USA Inc.
916,894
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37872
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
10V
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
260mW (Ta), 830mW (Tc)
-55°C ~ 150°C (TA)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
Pkg 5549
SI1308EDL-T1-GE3
MOSFET N-CH 30V 1.4A SOT323
Vishay Siliconix
35,267
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.97327
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.4A (Tc)
2.5V, 10V
132mOhm @ 1.4A, 10V
1.5V @ 250µA
4.1 nC @ 10 V
±12V
105 pF @ 15 V
-
400mW (Ta), 500mW (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SC-70-3
SC-70, SOT-323
8-Power TDFN
CSD19534Q5A
MOSFET N-CH 100V 50A 8VSON
Texas Instruments
13,634
In Stock
1 : ¥8.29000
Cut Tape (CT)
2,500 : ¥3.42950
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
44A (Tc)
6V, 10V
15.1mOhm @ 10A, 10V
3.4V @ 250µA
22 nC @ 10 V
±20V
1680 pF @ 50 V
-
3.2W (Ta), 63W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8-Power TDFN
BSC040N10NS5ATMA1
MOSFET N-CH 100V 100A TDSON
Infineon Technologies
53,644
In Stock
1 : ¥22.00000
Cut Tape (CT)
5,000 : ¥9.54166
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Tc)
6V, 10V
4mOhm @ 50A, 10V
3.8V @ 95µA
72 nC @ 10 V
±20V
5300 pF @ 50 V
-
2.5W (Ta), 139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
SC70, SOT−323, 419−04
2N7002KW
MOSFET N-CH 60V 310MA SC70
onsemi
32,829
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.66587
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
5V, 10V
1.6Ohm @ 500mA, 10V
2.1V @ 250µA
-
±20V
50 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-323
SC-70, SOT-323
8-Power TDFN
CSD19531Q5AT
MOSFET N-CH 100V 100A 8VSON
Texas Instruments
5,892
In Stock
1 : ¥17.40000
Cut Tape (CT)
250 : ¥7.57536
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Ta)
6V, 10V
6.4mOhm @ 16A, 10V
3.3V @ 250µA
48 nC @ 10 V
±20V
3870 pF @ 50 V
-
3.3W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8-Power TDFN
CSD19532Q5BT
MOSFET N-CH 100V 100A 8VSON
Texas Instruments
4,469
In Stock
1 : ¥22.25000
Cut Tape (CT)
250 : ¥14.29360
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Ta)
6V, 10V
4.9mOhm @ 17A, 10V
3.2V @ 250µA
62 nC @ 10 V
±20V
4810 pF @ 50 V
-
3.1W (Ta), 195W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
8-PQFN
FDMS86150ET100
MOSFET N-CH 100V 16A POWER56
onsemi
7,823
In Stock
6,000
Factory
1 : ¥38.18000
Cut Tape (CT)
3,000 : ¥28.22224
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
16A (Ta), 128A (Tc)
6V, 10V
4.85mOhm @ 16A, 10V
4V @ 250µA
62 nC @ 10 V
±20V
4065 pF @ 50 V
-
3.3W (Ta), 187W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
Showing
of 8

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.