Single FETs, MOSFETs

Results: 5
Manufacturer
STMicroelectronicsVishay Siliconix
Series
MDmesh™STripFET™ IIIThunderFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
40 V150 V200 V650 V800 V
Current - Continuous Drain (Id) @ 25°C
7.7A (Tc)8.5A (Tc)17A (Tc)35.4A (Tc)270A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V7.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 80A, 10V31.9mOhm @ 10A, 10V177mOhm @ 3A, 10V295mOhm @ 8.5A, 10V530mOhm @ 4.25A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V17 nC @ 10 V38 nC @ 10 V70 nC @ 10 V150 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 75 V644 pF @ 100 V1380 pF @ 100 V2070 pF @ 50 V7500 pF @ 25 V
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)70W (Tc)104W (Tc)190W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
10-PowerSOPowerFLAT™ (5x5)PowerPAK® SC-70-6PowerPAK® SO-8TO-263 (D2PAK)
Package / Case
8-PowerVDFNPowerPAK® SC-70-6PowerPAK® SO-8PowerSO-10 Exposed Bottom PadTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPak SC-70-6 Single
SIA446DJ-T1-GE3
MOSFET N-CH 150V 7.7A PPAK SC70
Vishay Siliconix
11,062
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.91420
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
7.7A (Tc)
6V, 10V
177mOhm @ 3A, 10V
3.5V @ 250µA
8 nC @ 10 V
±20V
230 pF @ 75 V
-
3.5W (Ta), 19W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
PowerPAK SO-8
SIR610DP-T1-RE3
MOSFET N-CH 200V 35.4A PPAK SO-8
Vishay Siliconix
2,474
In Stock
1 : ¥14.86000
Cut Tape (CT)
3,000 : ¥6.69964
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
35.4A (Tc)
7.5V, 10V
31.9mOhm @ 10A, 10V
4V @ 250µA
38 nC @ 10 V
±20V
1380 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
D2Pak
STB18NM80
MOSFET N-CH 800V 17A D2PAK
STMicroelectronics
10,000
In Stock
1 : ¥37.19000
Cut Tape (CT)
1,000 : ¥19.24370
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
17A (Tc)
10V
295mOhm @ 8.5A, 10V
5V @ 250µA
70 nC @ 10 V
±25V
2070 pF @ 50 V
-
190W (Tc)
150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
8PowerVDFN
STL11N65M5
MOSFET N-CH 650V 8.5A POWERFLAT
STMicroelectronics
980
In Stock
1 : ¥18.31000
Cut Tape (CT)
3,000 : ¥8.23698
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
8.5A (Tc)
10V
530mOhm @ 4.25A, 10V
5V @ 250µA
17 nC @ 10 V
±25V
644 pF @ 100 V
-
70W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerFLAT™ (5x5)
8-PowerVDFN
PowerSO-10
STV270N4F3
MOSFET N-CH 40V 270A 10POWERSO
STMicroelectronics
1,120
In Stock
1 : ¥45.32000
Cut Tape (CT)
600 : ¥27.36328
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
40 V
270A (Tc)
10V
1.5mOhm @ 80A, 10V
4V @ 250µA
150 nC @ 10 V
±20V
7500 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
10-PowerSO
PowerSO-10 Exposed Bottom Pad
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of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.