Single FETs, MOSFETs

Results: 2
Series
TrenchFET®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
15.8A (Ta), 52A (Tc)16A (Tc)
Rds On (Max) @ Id, Vgs
7.2mOhm @ 10A, 10V29mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs
21.2 nC @ 4.5 V30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1235 pF @ 30 V1875 pF @ 20 V
Power Dissipation (Max)
3.6W (Ta), 39W (Tc)62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8
SQS401EN-T1_BE3
MOSFET P-CH 40V 16A PPAK1212-8
Vishay Siliconix
82,982
In Stock
1 : ¥7.39000
Cut Tape (CT)
3,000 : ¥3.06278
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
16A (Tc)
4.5V, 10V
29mOhm @ 12A, 10V
2.5V @ 250µA
21.2 nC @ 4.5 V
±20V
1875 pF @ 20 V
-
62.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
PowerPAK 1212-8
SIS862ADN-T1-GE3
MOSFET N-CH 60V 15.8A/52A PPAK
Vishay Siliconix
16,576
In Stock
1 : ¥7.64000
Cut Tape (CT)
3,000 : ¥2.91265
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
15.8A (Ta), 52A (Tc)
4.5V, 10V
7.2mOhm @ 10A, 10V
2.5V @ 250µA
30 nC @ 10 V
±20V
1235 pF @ 30 V
-
3.6W (Ta), 39W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.