Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesRohm SemiconductorVishay Siliconix
Series
-HEXFET®TrenchFET® Gen III
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V200 V
Current - Continuous Drain (Id) @ 25°C
2.7A (Ta), 3.6A (Tc)17A (Tc)70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
7.1mOhm @ 70A, 10V75mOhm @ 2.7A, 10V165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA2.5V @ 250µA5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V41 nC @ 10 V105 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 20 V910 pF @ 25 V5550 pF @ 20 V
Power Dissipation (Max)
1W (Ta), 1.7W (Tc)3W (Ta), 140W (Tc)101W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3 (TO-236)TO-252TO-252AA (DPAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IRFR15N20DTRPBF
MOSFET N-CH 200V 17A DPAK
Infineon Technologies
5,452
In Stock
1 : ¥11.17000
Cut Tape (CT)
2,000 : ¥4.63152
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
17A (Tc)
10V
165mOhm @ 10A, 10V
5.5V @ 250µA
41 nC @ 10 V
±30V
910 pF @ 25 V
-
3W (Ta), 140W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
RB098BM-40FNSTL
RD3G07BATTL1
PCH -40V -70A POWER MOSFET - RD3
Rohm Semiconductor
10,408
In Stock
1 : ¥18.72000
Cut Tape (CT)
2,500 : ¥8.43659
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
70A (Tc)
4.5V, 10V
7.1mOhm @ 70A, 10V
2.5V @ 1mA
105 nC @ 10 V
±20V
5550 pF @ 20 V
-
101W (Tc)
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-23-3
SI2319DDS-T1-GE3
MOSFET P-CH 40V 2.7A/3.6A SOT23
Vishay Siliconix
28,780
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.32090
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
2.7A (Ta), 3.6A (Tc)
4.5V, 10V
75mOhm @ 2.7A, 10V
2.5V @ 250µA
19 nC @ 10 V
±20V
650 pF @ 20 V
-
1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.