Single FETs, MOSFETs

Results: 2
Manufacturer
EPCRohm Semiconductor
Series
-eGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V100 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)64A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V5V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 30A, 5V3.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 100µA2.5V @ 13mA
Vgs (Max)
+6V, -4V±8V
Input Capacitance (Ciss) (Max) @ Vds
7.1 pF @ 10 V3931 pF @ 50 V
Power Dissipation (Max)
150mW (Ta)-
Operating Temperature
-40°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
DieVMT3
Package / Case
DieSOT-723
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EPC2071
EPC2071
TRANS GAN 100V .0022OHM 21BMPD
EPC
17,624
In Stock
1 : ¥54.51000
Cut Tape (CT)
1,000 : ¥28.17260
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
64A (Ta)
5V
2.2mOhm @ 30A, 5V
2.5V @ 13mA
26 nC @ 5 V
+6V, -4V
3931 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
VMT3 Pkg
RUM001L02T2CL
MOSFET N-CH 20V 100MA VMT3
Rohm Semiconductor
725,086
In Stock
This product has a maximum purchase limit
1 : ¥2.22000
Cut Tape (CT)
8,000 : ¥0.34654
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.2V, 4.5V
3.5Ohm @ 100mA, 4.5V
1V @ 100µA
-
±8V
7.1 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VMT3
SOT-723
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.