Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedInfineon Technologiesonsemi
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
Drain to Source Voltage (Vdss)
20 V30 V100 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)630mA (Ta)8A (Ta), 40A (Tc)25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 30A, 10V16mOhm @ 20A, 10V400mOhm @ 600mA, 4.5V6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2.2V @ 250µA2.6V @ 1mA3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs
0.74 nC @ 4.5 V25 nC @ 10 V74 nC @ 10 V
Vgs (Max)
±6V±20V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 25 V60.67 pF @ 16 V1700 pF @ 50 V6100 pF @ 15 V
Power Dissipation (Max)
225mW (Ta)280mW (Ta)2.1W (Ta), 63W (Tc)2.5W (Ta), 83W (Tc)
Supplier Device Package
PG-TDSON-8-5PG-TSDSON-8SOT-23-3 (TO-236)SOT-523
Package / Case
8-PowerTDFNSOT-523TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-523
DMG1012T-7
MOSFET N-CH 20V 630MA SOT-523
Diodes Incorporated
335,233
In Stock
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.42141
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
400mOhm @ 600mA, 4.5V
1V @ 250µA
0.74 nC @ 4.5 V
±6V
60.67 pF @ 16 V
-
280mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
SOT 23-3
BSS123LT1G
MOSFET N-CH 100V 170MA SOT23-3
onsemi
267,113
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.49111
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
10V
6Ohm @ 100mA, 10V
2.6V @ 1mA
-
±20V
20 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSZ160N10NS3GATMA1
MOSFET N-CH 100V 8A/40A 8TSDSON
Infineon Technologies
41,640
In Stock
1 : ¥12.81000
Cut Tape (CT)
5,000 : ¥5.04048
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
8A (Ta), 40A (Tc)
6V, 10V
16mOhm @ 20A, 10V
3.5V @ 12µA
25 nC @ 10 V
±20V
1700 pF @ 50 V
-
2.1W (Ta), 63W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
8-Power TDFN
BSC025N03LSGATMA1
MOSFET N-CH 30V 25A/100A TDSON
Infineon Technologies
38,548
In Stock
1 : ¥16.42000
Cut Tape (CT)
5,000 : ¥4.48318
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
30 V
25A (Ta), 100A (Tc)
4.5V, 10V
2.5mOhm @ 30A, 10V
2.2V @ 250µA
74 nC @ 10 V
±20V
6100 pF @ 15 V
-
2.5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
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of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.