Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedVishay Siliconix
Packaging
BulkTube
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
45 V60 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V10V
Rds On (Max) @ Id, Vgs
50mOhm @ 18A, 5V14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3.5V @ 1mA
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 10 V1600 pF @ 25 V
Power Dissipation (Max)
700mW (Ta)88W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
TO-220ABTO-92
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-92
BS250P
MOSFET P-CH 45V 230MA E-LINE
Diodes Incorporated
5,965
In Stock
28,000
Factory
1 : ¥6.98000
Bulk
-
Bulk
Active
P-Channel
MOSFET (Metal Oxide)
45 V
230mA (Ta)
10V
14Ohm @ 200mA, 10V
3.5V @ 1mA
-
±20V
60 pF @ 10 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
TO-220AB
IRLZ34PBF
MOSFET N-CH 60V 30A TO220AB
Vishay Siliconix
6,265
In Stock
1 : ¥15.27000
Tube
-
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
60 V
30A (Tc)
4V, 5V
50mOhm @ 18A, 5V
2V @ 250µA
35 nC @ 5 V
±10V
1600 pF @ 25 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.