Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

MC3541A-TP N-CHANNEL MOSFET,SOT-723 Micro Commercial Co	23,414 In Stock	1 : ¥1.72000 Cut Tape (CT) 8,000 : ¥0.27028 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	300mA	2.5V, 10V	3Ohm @ 500mA, 10V	1.45V @ 250µA	1.2 nC @ 10 V	±20V	28 pF @ 30 V	-	270mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
DMP2004K-7 MOSFET P-CH 20V 600MA SOT23-3 Diodes Incorporated	943,889 In Stock 537,000 Factory	1 : ¥2.22000 Cut Tape (CT) 3,000 : ¥0.32204 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	600mA (Ta)	1.8V, 4.5V	900mOhm @ 430mA, 4.5V	1V @ 250µA	-	±8V	175 pF @ 16 V	-	550mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NXV75UPR NXV75UP/SOT23/TO-236AB Nexperia USA Inc.	17,756 In Stock	1 : ¥2.79000 Cut Tape (CT) 3,000 : ¥0.50783 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	1.8A (Ta)	2.5V, 4.5V	90mOhm @ 1.8A, 4.5V	1V @ 250µA	6.3 nC @ 4.5 V	±8V	330 pF @ 10 V	-	340mW (Ta), 2.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.