Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

FQD18N20V2TM MOSFET N-CH 200V 15A DPAK onsemi	1,785 In Stock	1 : ¥11.08000 Cut Tape (CT) 2,500 : ¥4.57040 Tape & Reel (TR)	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	15A (Tc)	10V	140mOhm @ 7.5A, 10V	5V @ 250µA	26 nC @ 10 V	±30V	1080 pF @ 25 V	-	2.5W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SUM70101EL-GE3 MOSFET P-CH 100V 120A TO263 Vishay Siliconix	0 In Stock Check Lead Time	1 : ¥33.41000 Cut Tape (CT) 800 : ¥20.18586 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	4.5V, 10V	10.1mOhm @ 30A, 10V	2.5V @ 250µA	190 nC @ 10 V	±20V	7000 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SCTH40N120G2V7AG SICFET N-CH 650V 33A H2PAK-7 STMicroelectronics	0 In Stock Check Lead Time	1 : ¥140.14000 Cut Tape (CT) 1,000 : ¥88.77721 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	33A (Tc)	18V	105mOhm @ 20A, 18V	5V @ 1mA	63 nC @ 18 V	+22V, -10V	1230 pF @ 800 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.